Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer a promising pathway for next-generation electronics due to their exceptional electrical characteristics at atomically thin thickness. Nevertheless, the realization of high-quality p-type 2D-FETs remains a significant challenge for CMOS device integration due to surface damage and unintended n-doping induced during dielectric deposition. In this work, we report the wafer-scale synthesis of p-type WSe 2 films using metal-organic chemical vapor deposition and the fabrication of top-gate p-FETs through a buffer layer strategy, which provides superior electrostatic control and channel stability. The transistors exhibit excellent p-type performance, achieving a hole mobility of 10.49 ± 2.35 cm 2 V −1 s −1 with on/off current ratio exceeding 10 9 . By leveraging the process’s scalability, which ensures uniform and damage-free fabrication, we successfully produced reliable wafer-scale PMOS logic circuits. This study provides a scalable, damage-free integration solution for 2D electronics, paving the way for the practical realization of all 2D-based high-density electronics and circuits.