In addition to spin, the low-energy charge carriers in graphene have two inequivalent valley flavors K and K' related by time-reversal symmetry, which can potentially serve as carriers for additional information. One promising route of controlling the valley degree of freedom relies on strain-induced pseudomagnetic fields, which couple with opposite signs to the two valleys. In this work, we theoretically investigate quantum transport in strained graphene devices that host tailored pseudomagnetic field profiles for valley manipulation. We focus on experimentally feasible geometries and propose transverse pseudomagnetic focusing in a bent graphene ribbon as an efficient method for generating valley-polarized currents, even in presence of disorder. Our work highlights pseudomagneto-transport in graphene as a viable tool for valleytronic applications.