Monolayer TaIrTe₄ is an ideal platform to explore the tunability of band topology where charge doping converts the quantum spin Hall insulator (QSHI) state into a dual QSHI state. However, experimental visualization of its band structure has been lacking despite its importance in interpreting this topological phase transition. Here we report the band structure of monolayer TaIrTe₄ using micro-focused angle-resolved photoemission spectroscopy (μARPES). Observed dispersions agree with the Heyd-Scuseria-Ernzerhof (HSE) calculations, establishing the insulating ground state without strong electronic correlations. Furthermore, we show an electron-hole asymmetry in the doping response, where hole doping is readily induced by electrostatic gating, whereas electron doping via gating and alkali-metal deposition yields band renormalization instead of a rigid shift. Fractional-charge calculations demonstrate that added electrons shrink the band gap and drive band renormalization. Thus, our work identifies the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe₄, beyond the rigid shift behavior.