Fully compensated ferrimagnets (fFIMs) have attracted interest due to their compensated moments and nonrelativistic spin splitting across the Brillouin zone. Known fFIMs, however, are mostly restricted to complex three-dimensional (3D) systems or require external fields in two-dimensional (2D) heterostructures, leaving intrinsic fFIM monolayers unexplored. We identify a hidden-phase MnSe monolayer, derived from the (001) planes of wurtzite, as an intrinsic fFIM featuring inequivalent sublattices not linked by any symmetry. It is a unipolar magnetic semiconductor (UMS) with perpendicular magnetic anisotropy (528.60 * 10^-3 eV per unit cell) and simultaneously exhibits ferroelectricity (polarization 4.63 * 10^-10 C/m) and ferroelasticity (signal 61%), with barriers of 7.6 * 10^-3 and 0.10 eV/f.u., respectively, establishing a single-phase triferroic system. The ground fFIM UMS characteristics are robust against strain up to 3%. The In2Se3/MnSe heterostructure enables nonvolatile electrical control between semiconducting and metallic states. Constructed tunnel junctions exhibit giant tunneling magnetoresistance (2.98 * 10^5%), electroresistance (6.97 * 10^14%), elastoresistance (7.95 * 10^4%), and near-perfect spin filtering ( 100%). Collectively, this spontaneous 2D fFIM with coexisting triferroic orders provides a promising platform for ultrahigh-density, low-power, and miniaturized memory devices.