On-chip micromagnets generate local magnetic-field asymmetries, enabling electrical control of spin qubits via electric dipole spin resonance and their integration into circuit quantum electrodynamics (QED) architectures. Accurate prediction of spin-qubit performance requires modeling micromagnet stray fields beyond the saturated-magnet approximation, accounting for nonuniform magnetization. Here, we combine thin-film characterization of Co, Co/Ta multilayers, and CoFe films with nanoscale stray-field measurements using NV-center magnetometry in the unsaturated regime to establish a reliable micromagnetic simulation framework. We show that CoFe micromagnets generate antisymmetric fields in double quantum-dot geometries exceeding +/- 100mT, owing to their high saturation magnetization and favorable magnetocrystalline anisotropy. For spin qubits coupled to microwave resonators, the predicted spin-photon coupling reaches | gₛ/g_c | ≈ 0.5, where g_c denotes the charge-photon coupling strength of the underlying charge qubit, highlighting the potential for high-fidelity operations in circuit QED architectures.