ArXiv · 2026
Sadeed Hameed (Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany), Aditya Kumar (Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany), Chengjie Yu (School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China), Aravind P. Balan (Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany, Department of Materials Science and NanoEngineering, Rice University, Houston, Texas, USA), Xinran Wang (Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany), Lichuan Zhang (School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China), Yuriy Mokrousov (Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany, Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, Jülich, Germany), Mathias Kläui (Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany, Centre for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, Trondheim, Norway)
We explore the large magnetoresistance (MR) in hBN/few-layer-graphene/CrSBr/few-layer-graphene heterostructures and reveal the mechanism behind its non-monotonic bias dependence. Using bias voltage and temperature as independent tuning knobs, we achieve MR up to 350% at 20K, characterized by symmetric M-shaped maxima around ± 0.5 V. Continuous tuning of the magnetization angle θ via a hard-axis magnetic field shows that the barrier band-edge offset varies linearly with cos(θ/2), a first-order signature of spin-dependent interlayer hybridization. This linear relationship rules out the Jullière model and a spin-filter projection. We conclude that the magnetic-configuration-dependent band edge, rather than electrode spin polarization, dictates the large magnetoresistance in CrSBr junctions.
