Spin of a donor bound electron in silicon has been shown to be a very coherent qubit system but lacks a coherent optical interface. There does, however, exist a donor bound exciton transition that can be excited optically but decays dominantly via an Auger recombination producing an electrical signal. This provides an opto-electrical pathway for spin readout. Scaling this readout to single-spin level will require interfacing the spins with silicon photonics for efficient guiding of photons, which in turn will require moving to silicon-on-insulator (SOI) substrates. Here we demonstrate first ensemble opto-electronic measurements of donor bound excitons in SOI material, including isotopically purified 28-Si device layers. The experiments show pronounced shifts in the resonance wavelengths and broadenings of the transition linewidths compared to the bulk experiments.