A negatively charged lead-vacancy (PbV-) center in diamond is a novel quantum system which can be operated at a high temperature above 4 K owing to its large ground state splitting. To unlock the quantum properties of the PbV- center, the enhancement of the fluorescence intensity is a key issue. Here, we demonstrate enhanced emission from PbV- centers by a factor of approximately 10 using solid immersion lenses (SILs) fabricated on rough diamond surface caused by high-temperature anneal over 2000°C. Resonant excitation reveals the narrow emission close to the transform-limited linewidth. Furthermore, we demonstrate two-photon interference using one single PbV- center in an SIL. This enhanced emission and indistinguishability will lead to further development of the PbV- center towards quantum network node applications.