Orbital transport in light transition metals has emerged as a promising route toward angular-momentum electronics, with Hanle magnetoresistance (HMR) providing a direct electrical probe of the orbital Hall effect (OHE) in non-magnetic conductors. Here we report magnetoresistance signatures consistent with orbital HMR in epitaxial SrVO*3 (SVO), a narrow-band d¹ oxide grown on (001)-oriented (LaAlO*3)*0.3(Sr*2TaAlO*6)*0.7 substrates. In films of different thickness and longitudinal resistivity, field-dependent measurements reveal a reproducible positive, even-in-field, and approximately quadratic Δρ*x-y response, as expected for HMR. Angular measurements characterize the corresponding magnetoresistance anisotropy and reveal an additional non-Hanle contribution. Density functional theory (DFT) calculations yield an intrinsic orbital Hall conductivity σ*OH^DFT = 390,(ℏ/e),Ω⁻¹cm⁻¹ and a spin Hall conductivity σ_SH^DFT = -12,(ℏ/e),Ω⁻¹cm⁻¹ at the Fermi level, corresponding to |σ_OH^DFT/σ_SH^DFT| ≈ 33, thus indicating a predominantly orbital response. Using the diffusive HMR framework with λ_OD = 2 nm as a reference value, the 20.8 nm film gives conservative saturation-limit lower-bound (LB) estimates θ_(OH,LB) = 0.0144 ± 0.0004 and σ_(OH,LB) = (460 ± 11),(ℏ/e),Ω⁻¹cm⁻¹, comparable to the DFT value. Across the series, lower-bound estimates obtained with the same λ_OD increase overall with longitudinal conductivity. These results suggest that narrow-band d¹ metallic oxides are a promising platform for orbital transport.