Two neighboring lateral interfaces provide a spatial degree of freedom for controlling one-dimensional charge-transfer excitons within a single semiconductor monolayer. We investigate a type-II WS2-MoS2-WS2 double heterojunction using an effective-mass two-particle Hamiltonian with a screened Coulomb interaction. For equivalent left and right interfaces at zero electric field,inter-interface coupling produces energetically split even- and odd-parity exciton states, each with zero permanent dipole. An electric field perpendicular to the interfaces continuously converts the lower state from a quadrupolar superposition with a quadratic Stark shift into a predominantly single-interface dipolar exciton with an approximately linear shift. The spatially resolved calculation gives binding energies of approximately 104 and 100 meV, a doublet splitting of 4.6 meV, and a crossover field of 0.87 V/um for a representative 1.5-nm MoS2 strip. Projection tests show that the lowest doublet controls the response near this crossover. Strip width tunes the coupling much more strongly than the binding energy, providing geometric control of the low-field Stark sensitivity. These results establish a continuum-model route to electrically reconfigurable one-dimensional quadrupolar excitons.