Moiré superlattices formed in transition metal dichalcogenides (TMDs) offer a versatile platform for exploring emergent quantum phases arising from strong electronic correlations. In this work, we develop a new experimental platform, the quantum well resonant tunneling diode (QWRTD), to probe the electronic landscape of ≈ 57^∘ twisted bilayer MoS₂ (tMoS₂). By measuring the differential conductance (dI/dV_Probe) as a function of filling factor ν and displacement field D, we observe a robust integer correlated insulating state at ν = 1 that persists across the measured displacement field range. Furthermore, we identify a displacement-field-induced fractional insulating state at ν = 3/4 for D < -75~mV/nm. Temperature- and magnetic-field-dependent measurements characterize this ν = 3/4 state as a potential generalized Wigner crystal. These correlated states are also observed in another device with a similar twist angle (≈ 56.5^∘). Our results provide direct evidence of correlated states in near-AB-stacked tMoS₂ and establish QWRTD as a powerful experimental tool for investigating strong correlations and topology in van der Waals heterostructures.