Epitaxial quantum dots (QDs) are widely recognised as one of the best quantum light sources, given their good stability, brightness, quantum efficiency and coherence. To reach such properties, QDs are protected from potentially detrimental surface states by a relatively thick capping layer, typically exceeding 50nm. This prevents the implementation of near-field effects, like plasmonic-based ones, that can dramatically increase the light-matter interaction, since the control of the spontaneous emission dynamics and directionality of the emission can only occur if the emitter is in close proximity (typically tens of nanometers or less) from the metallic structures. In this work, we report the growth and optical characterisation of InAs/GaAs QDs with GaAs capping layer thickness of 10nm, 20nm, and a more standard 95nm. Remarkably, we observe emission linewidths up to 5 times smaller than previously reported, with unperturbed excitonic lifetimes. These results demonstrate that the epitaxial QD's high optical quality can be maintained even when the emitters are at reduced distances from the surface, opening the path for the exploration of near-field light-matter interactions with coherent and stable emitters, suitable for quantum technology applications.