The optical properties of monolayer transition metal dichalcogenides (TMDCs) are strongly impacted by exciton-phonon coupling, especially inter-valley scattering in the case of tungsten-based materials. Together with strain-tunability of the energetic K-Q valley separation this material class therefore provides a platform for semiconductor optomechanics. Here we investigate the influence of inter-valley scattering and strain on resonance Raman scattering in monolayer TMDCs using a microscopic model based on an effective deformation potential coupling for the exciton-phonon interaction. Considering exemplarily the resonance Raman profile of the A₁-mode in hBN-encapsulated monolayer WSe₂, we find that inter-valley scattering between the electronic K- and Q-valley leads to destructive interference between a first order and a third order Raman process. As a result we obtain a suppression of the incoming resonance in WSe₂, consistent with recently published experimental data.