Ferroelectric layered semiconductors provide a unique platform for exploring coupled excitonic and electronic phenomena in reduced dimensions. Here, exciton transport in layered NbOI₂ is investigated using transient absorption microscopy. Ultrafast and strongly anisotropic exciton diffusion is observed. The diffusion coefficient of about 160 cm² s⁻¹ along the nonpolar crystal axis is among the highest reported for van der Waals semiconductors. The transport exhibits an approximately twofold in-plane anisotropy between the polar and nonpolar directions, reflecting the intrinsic low-symmetry crystal structure of NbOI₂. The environmental stability of NbOI₂ is further investigated, and fabrication and encapsulation conditions required to achieve long-term sample stability are identified. These results establish NbOI₂ as a promising platform for studying anisotropic exciton transport and highlight the critical role of interface protection in air-sensitive van der Waals materials.