We calculate the temperature- and density-dependent resistivity of bilayer MoSe₂ in the presence of charged impurities, short-range defects, and longitudinal acoustic phonons, using the Boltzmann transport theory with screening treated in the random phase approximation, and compare the results with recent transport measurements. The disorder parameters are taken from the experiment itself and the phonon parameters are taken from literature estimates for MoSe₂. We find that screened acoustic phonons are a small correction to the disorder-limited resistivity over the entire experimental temperature range, so that the temperature dependence of the measured resistivity on the metallic side is controlled by the temperature-dependent screening of charged disorder and by neutral defects. We also show that a resistivity minimum as a function of temperature can arise on both sides of the metal-insulator crossover through two different mechanisms: on the insulating side from the interplay between activated carriers and resistive scattering, and on the metallic side from the interplay between disorder and phonon scattering. The existence of a resistivity minimum by itself therefore does not identify the phase.