Spintronic terahertz (THz) emitters based on ferromagnet/heavy-metal bilayers provide an efficient route for generating broadband THz radiation through ultrafast spin-to-charge conversion. However, Ni/Pt bilayers usually exhibit relatively weak THz emission, limiting their use as efficient spintronic emitters. Here, we report an interface-assisted enhancement of THz emission in ZnO/Ni/Pt heterostructures. By placing ZnO underneath Ni while preserving the direct Ni/Pt contact, the THz amplitude is increased by up to approximately 2.8 times compared with the Ni/Pt reference. The enhanced emission reverses polarity with the magnetic field and follows the expected angular dependence of ultrafast spin-to-charge conversion. ZnO-, Ni-, and Pt-thickness-dependent measurements show that the emission remains governed by the Ni/Pt conversion process but is strongly affected by the ZnO/Ni bottom interface. Control samples with Al2O3, Cu, and Fe further exclude a simple underlayer, optical, or growth-quality origin. The enhancement is attributed to a short-range ZnO/Ni interface effect, possibly involving oxygen-related defects, interfacial electric fields, and modification of the Ni interfacial state. This work provides a semiconductor/ferromagnet interface-engineering strategy for activating weak Ni/Pt spintronic THz emitters.