Semiconductor quantum dots emitting in the telecommunication O- and C-bands are promising candidates as single-photon sources for fiber-based quantum communication. In this work, we show how coherent quasi-resonant and phonon-assisted excitation help reveal the intrinsic optical properties of InAs quantum dots embedded in relaxed InGaAs matrices on top of metamorphic InGaAs layers for achieving emission in the telecom bands. By systematically comparing excitation schemes, we separate excitation-induced effects from intrinsic emitter properties. This allows us to observe linewidths as narrow as 21 μeV, the disappearance of slow decay channels, and single-photon purity reaching second-order autocorrelation values in the order of 10⁻². Photoluminescence excitation reveals higher excited states, enabling coherent control of trion transitions and the observation of Rabi-like oscillations in both telecom bands. These results confirm the promising potential of these quantum dots for applications in quantum technologies.